B715

2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB715 –100 –100 –5 –50 750 150 –55 to +150 2SB716 –120 –120 –5 –50 750 150 –55 to +150 2SB716A –140 –140 –5 –50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SB715 2SB716 2SB716A Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –100 — — –120 — — –140 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –100 — — –120 — — –140 — — V IC = –1 mA, RBE = ∞ Collector cutoff current ICBO — — –0.5 — — — — — — µA VCB = –80 V, IE = 0 — — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0 DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500 VCE = –12 V, IC = –2 mA hFE2 125 — — 125 — — 125 — — VCE = –12 V, IC = –10 mA Base to emitter voltage VBE — — –0.75 — — –0.75 — — –0.75 V VCE = –12 V, IC = –2 mA Collector to emitter saturation voltage VCE(sat) — — –0.2 — — –0.2 — — –0.2 V IC = –10 mA, IB = –1 mA Gain bandwidth product fT — 150 — — 150 — — 150 — MHz VCE = –1...