Silicon N-Channel Power MOSFET
CS8N65 A8H
○R
General Description:
CS8N65 A8H, the silicon N-channel Enhanced
VDMOSFE...
Silicon N-Channel Power MOSFET
CS8N65 A8H
○R
General Description:
CS8N65 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt
Power Dissipation
PD Derating Factor above 25°C
TJ,Tstg TL
Operating Junction and Storage Temperature Range Maximum Temperature for Soldering
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 8
110 0.9
Rating 650 8 5.5 32 ±30 500 40 2.8 5.0 110 0.88
150,–55 to 150 300
V A W Ω
Units V A A A V mJ mJ A
V/ns W
W/℃ ℃ ℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
CS8N65 A8H
○R
Electrical Characteristics(Tc= 25...