FDD1600N10ALZ

FDD1600N10ALZ — N-Channel PowerTrench® MOSFET FDD1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 6.8 A, 160 m January 2014 Features RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A Low Gate Charge (Typ.2.78 nC) Low Crss (Typ. 2.04 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D G S D D-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDD1600N10ALZ 100 ±20 6.8 4.3 13.6 5.08 6.0 14.9 0.12 -55 to +150 300 FDD1600N10ALZ 8.4 87 Un...