SI4599DY

New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) 40 - 40 RDS(on) (Ω) 0.0355 at VGS = 10 V 0.0425 at VGS = 4.5 V 0.045 at VGS = - 10 V 0.062 at VGS = - 4.5 V ID (A)a Qg (Typ.) 6.8 5.3 6.2 - 5.8 - 5.0 11.8 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS Backlight Inverter for LCD Display Full Bridge Converter D1 G2 G1 RoHS COMPLIANT S2 Top View Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C 6.8 - 5.8 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.4 5.6b, c - 4.7 - 4.7b, c TA = 70 °C 4.4b, c - 3.7b, c Pulsed Drain Current IDM 20 - 20 Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS 2.5 1.6b, c - 2.5 - 1.6b, c Pulsed Source-Drain Current ISM 20 - 20 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0 1 mH IAS EAS 7 2.45 - 10 5 TC = 25 °C 3.0 3.1 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 1.9 2.0b, c 2 2.0b, c TA = 70 °C 1.25b, c 1.25b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Ma...