SI7370DP

N-Channel 60-V (D-S) MOSFET Si7370DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.011 at VGS = 10 V 60 0.013 at VGS = 6 V ID (A) 15.8 14.5 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7370DP-T1-E3 (Lead (Pb)-free) Si7370DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested APPLICATIONS Primary Side Switch for 24 V DC/DC Applications Secondary Synchronous Rectifier D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Continuous Source Current TA = 25 °C TA = 70 °C Pulsed Drain Current Avalanche Current Single Avalanche Energy Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 60 ± 20 15.8 9.6 12.6 7.7 4.7 1.7 50 50 125 5.2 1.9 3.3 1.25 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 19 52 24 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.5 1.8 Notes a. Surface Mounted on ...