Power MOSFET
Power MOSFET
IRLIZ24G, SiHLIZ24G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
Power MOSFET
IRLIZ24G, SiHLIZ24G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
18 4.5 12 Single
0.10
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Ease of Paralleling Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRLIZ24GPbF SiHLIZ24G-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta
VGS at 5.0 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Maximum Power Dissipation Peak ...
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