SIR422DP

N-Channel 40-V (D-S) MOSFET SiR422DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0066 at VGS = 10 V 40 0.008 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a 40 40 Qg (Typ.) 16.1 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR422DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS POL Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1 mH Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit 40 ± 20 40a 40a 20.5b, c 16.4b, c 70 30 45 40a 4.1b, c 34.7 22.2 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 3.1 Maximum 25 3.6 Unit °C/W Notes: a. Based on TC = 25 °C. Package limited. b. Surface Mounted ...