AS4C64M16D2

AS4C64M16D2 1Gb (64M x 16 bit) DDRII Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.0 April 2012) Features JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V ± 0.1V Operating temperature: - Commercial (0 ~ 85°C) - Industrial (-40 ~ 95°C) Supports JEDEC clock jitter specification Fully synchronous operation Fast clock rate: 400MHz Differential Clock, CK & CK# Bidirectional single/differential data strobe -DQS & DQS# 8 internal banks for concurrent operation 4-bit prefetch architecture Internal pipeline architecture Precharge & active power down Programmable Mode & Extended Mode registers Posted CAS# additive latency (AL): 0, 1, 2, 3, 4, 5, 6 WRITE latency = READ latency - 1 tCK Burst lengths: 4 or 8 Burst type: Sequential / Interleave DLL enable/disable On-die termination (ODT) RoHS compliant Auto Refresh and Self Refresh 8192 refresh cycles / 64ms -Average refresh period 7.8µs @ 0℃≦TC≦+85℃ 3.9µs @ +85℃＜TC≦+95℃ 84-ball 8 x 12.5 x 1.2mm (max) FBGA package - Pb and Halogen Free Overview The AS4C64M16D2 is a high-speed CMOS Double- DataRate-Two (DDR2), synchronous dynamic random - access memory (SDRAM) containing 1024 Mbits in a 16bit wide data I/Os. It is internally configured as a 8- bank DRAM, 8 banks x 8Mb addresses x 16 I/Os. The device is designed to comply with DDR2 DRAM key features such as posted CAS# with additive latency, Write latency = Re...