DatasheetsPDF.com

2SC1733 Dataheets PDF



Part Number 2SC1733
Manufacturers Renesas
Logo Renesas
Description NPN SILICON DUAL TRANSISTOR
Datasheet 2SC1733 Datasheet2SC1733 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE DESCRIPTION t The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two c transistor chips equivalent to the 2SC1275 are housed in a package the same size as TO-18. du FEATURES High gain bandwidth product: fT = 2 GHz TYP. o Compact package, the same size as TO-18 PACKAGE DIMENSIONS (in millimeters) φ 5..

  2SC1733   2SC1733



Document
DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE DESCRIPTION t The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two c transistor chips equivalent to the 2SC1275 are housed in a package the same size as TO-18. du FEATURES High gain bandwidth product: fT = 2 GHz TYP. o Compact package, the same size as TO-18 PACKAGE DIMENSIONS (in millimeters) φ 5.84 MAX. φ 4.95 MAX. 12.5 MIN. 5.33 MAX. 1.0 0.25 r ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) P PARAMETER Collector to Base Voltage d Collector to Emitter Voltage e Emitter to Base Voltage Collector Current u Collector Dissipation Total Power Dissipation in Junction Temperature t Storage Temperature SYMBOL RATINGS UNIT VCBO 30 V VCEO 14 V VEBO 3.0 V IC 50 mA PC 200 mW/unit PT 300 mW Tj 200 ˚C Tstg –65 to +200 ˚C n ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) φ 2.54 60˚ 2 1 3 4 1.05 65 60˚ PIN CONNECTIONS 1. 1E 2. 1C 1C 2C 2 5 3. 1B 4. 2B 5. 2C 3 1B 4 2B 6. 2E 1 6 1E 2E o PARAMETER c Collector Cut-off Current Emitter Cut-off Current is DC Current Gain hFE Ratio DDifference of Base to Emitter Voltage SYMBOL ICES IEBO hFE hFE1/hFE2 ∆VBE TEST CONDITIONS VCE = 15 V, RBE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA* VCE = 10 V, IC = 10 mA MIN. 25 0.8 TYP. 80 MAX. 50 50 200 1.0 30 UNIT nA nA mV Gain Bandwidth Product fT VCE = 10 V, IC = 10 mA 1.5 2.0 GHz Output Capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 1.1 1.5 pF * hFE1 is the smaller hFE value of the 2 transistors. Document No. P11669EJ1V0DS00 (1st edition) Date Published July 1996 P Printed in Japan © 1996 2SC1733 TYPICAL CHARACTERISTICS (TA = 25 ˚C) hFE - DC Current Gain VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 100 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 2 IC = 10·IB 1 VBE(sat) 70 0.5 50 30 20 10 7 5 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 30 50 IC - Collector Current - mA COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 1.0 V 0.2 0.1 t 0.05 VCE(sat) c 0.02 0.1 0.2 0.5 1 2 5 10 20 50 IC - Collector Current - mA odu OUTPUT CAPACITANCE vs. r COLLECTOR TO BASE VOLTAGE P 3 Cob - Output Capacitance - pF IC - Collector Current - mA 3000 2000 1000 700 500 300 20 10 d 5 e 2 u 1 in 0.5 0.6 0.7 0.8 0.9 t VBE - Base to Emitter Voltage - V n GAIN BANDWIDTH PRODUCT vs. o COLLECTOR CURRENT c VCE = 5.0 V DisVCE = 2.0 V 2 1 0.7 0.5 0.3 0 0.5 1 2 3 5 7 10 2030 VCB - Collector to Base Voltage - V 200 100 70 50 0.1 0.2 0.30.5 0.7 1 2 3 5 7 10 20 30 50 IC - Collector Current - mA fT - Gain Bandwidth Product - MHz 2 [MEMO] 2SC1733 Discontinued Product 3 2SC1733 uct No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this d document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising o from use of such device. No license, either express, implied or otherwise, is granted under any patents, r copyrights or other intellectual property rights of NEC Corporation or others. P While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. d NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on e a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each u device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic in equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster t systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) n Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical.


89C51RE2 2SC1733 C1733


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)