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LC05112CMT Dataheets PDF



Part Number LC05112CMT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 1-Cell Lithium-Ion Battery Protection IC
Datasheet LC05112CMT DatasheetLC05112CMT Datasheet (PDF)

LC05112CMT CMOS LSI 1-Cell Lithium-Ion Battery Protection IC with integrated Power MOS FET http://onsemi.com Overview The LC05112CMT is a protection IC for 1-cell lithium-ion secondary batteries with integrated power MOS FET. Also it integrates highly accurate detection circuits and detection delay circuits to prevent batteries from over-charging, over-discharging, over-current discharging and over-current charging. A battery protection system can be made by only LC05112CMT and few external pa.

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LC05112CMT CMOS LSI 1-Cell Lithium-Ion Battery Protection IC with integrated Power MOS FET http://onsemi.com Overview The LC05112CMT is a protection IC for 1-cell lithium-ion secondary batteries with integrated power MOS FET. Also it integrates highly accurate detection circuits and detection delay circuits to prevent batteries from over-charging, over-discharging, over-current discharging and over-current charging. A battery protection system can be made by only LC05112CMT and few external parts.. WDFN6 2.6x4.0, 0.65P, Dual Flag Feature  Charge-and-discharge power MOSFET are integrated at Ta = 25C, VCC = 4.5V ON resistance (total of charge and discharge) 11.2m (typ)  Highly accurate detection voltage/current at Ta = 25C, VCC = 3.7V Over-charge detection ±25mV Over-discharge detection ±50mV Charge over-current detection ±0.7A Discharge over-current detection ±0.7A  Delay time for detection and release (fixed internally)  Discharge/Charge over-current detection is compensated for temperature dependency of power FET.  0V battery charging : “Unavailable”  Over charge detection voltage : 4.0V to 4.5V (5mV steps)  Over charge release hysteresis : 0V to 0.3V (100mV steps)  Over discharge detection voltage : 2.2V to 2.8V (50mV steps)  Over discharge release hysteresis : 0V to 0.075V (25mV steps)  Discharge over current detection : 2.0A to 8.0A (0.5A steps)  Charge over current detection : 8.0A to -2.0A (0.5A steps)  Over-discharge detection delay time : 20ms or 128ms Typical Applications  Smart phone  Tablet  Wearable device ORDERING INFORMATION See detailed ordering and shipping information on page 15 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September 2014 - Rev. 1 1 Publication Order Number : LC05112CMT/D LC05112CMT Specifications Absolute Maximum Ratings at Ta = 25C Parameter Supply voltage S1 - S2 voltage CS terminal Input voltage Charge or discharge current TST Input voltage Storage temperature Current between S1 and S2(DC) Current between S1 and S2 (continuous pulse) Operating ambient temperature Symbol VCC VS1-S2 CS BAT-, PACTST Tstg ID IDP Topr Ratings -0.3-12.0 24.0 VCC24.0 10.0 -0.3-7 55 to +125 10.0 35 40 to +85 Allowable power dissipation Pd 350 Junction temperature Tj 125 Unit V V V A V C A A C mW C Conditions Between PAC+ and VCC : R1=680 VCC = 3.7V Pulse Width<10s, duty cycle<1% Glass epoxy four-layer board. Board size 27.4mm x 3.1mm x 0.8mm Caution 1) Absolute maximum ratings represent the values which cannot be exceeded even for a moment. Caution 2) If you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Example of Application Circuit Components R1 Recommended value 680 MAX 1k unit  Description R2 1k 2k  C1 2.2 4.7u F * We don’t guarantee the characteristics of the circuit shown above. * TST pin would be better to be connected to VSS pin, though it is connected to VSS with internal resistor (100k typ). http://www.onsemi.com 2 LC05112CMT Electrical Characteristics at Ta = 25C, unless otherwise specified. Parameter Detection voltage Over-charge detection voltage Over-charge release voltage Over-discharge detection voltage Over-discharge release voltage Discharge over-current detection current Discharge over-current release current Discharge over-current detection current (Short circuit) Charge over-current detection current Charge over-current release current Input voltage 0 V battery charge inhibition battery voltage Current consumption Operating current Shutt down current Resistance ON resistance 1 of integrated power MOS FET ON resistance 2 of integrated power MOS FET ON resistance 3 of integrated power MOS FET ON resistance 4 of integrated power MOS FET Internal resistance (VCC-CS) Internal resistance (VSS-CS) Detection and Release delay time Over-charge detection delay time Over-charge release delay time Over-discharge detection delay time Over-discharge release delay time Discharge over-current detection delay time 1 Discharge over-current release delay time 1 Discharge over-current detection delay time 2 (Short circuit) Charge Over-current detection delay time Charge Over-current release delay time Symbol Vov Vovr Vuv Vuvr Ioc Iocr Ioc2 Ioch Iochr Vinh Icc Ishutt Ron1 Ron2 Ron3 Ron4 Rcsu Rcsd Tov Tovr Tuv Tuvr Toc1 Tocr1 Toc2 Toch Tochr MIN. Vov_set -25 Vovr_set -40 Vuv_set -50 Vuvr_set -100 Ioc_set -0.7 Ioc_set-0.7 14.7 Ioch_set -0.7 Ioch_set-0.7 0.4 10.4 9.6 9.2 8.8 0.8 12.8 102 16 0.9 9.6 3.2 80 12.8 3.2 .


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