Document
MBRJ20H100CTG
SWITCHMODE Power Rectifier 100 V, 20 A
Features and Benefits
• Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device
Applications
• Power Supply − Output Rectification • Power Management • Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
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SCHOTTKY BARRIER RECTIFIER
20 AMPERES, 100 VOLTS
1 2, 4
3
TO−220 FULLPAK] CASE 221AH CT SUFFIX
MARKING DIAGRAM
AYWW B20H100G
AKA
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ISOLATED TO−220
A = Assembly Location
Y = Year
WW = Work Week
B20H100 = Device Code
G = Pb−Free Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 1
1
Publication Order Number: MBRJ20H100CT/D
MBRJ20H100CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage‘ Average Rectified Forward Current
(Rated VR) TC = 162°C Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 160°C Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM VRWM
VR IF(AV)
IFRM
IFSM
100
10 20 250
V
A A A
Operating Junction Temperature (Note 1)
TJ +175 °C
Storage Temperature
Tstg *65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
WAVAL
200
mJ
ESD Ratings: Machine Model = C Human Body Model = 3B
> 400 > 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS Characteristic
Maximum Thermal Resistance Junction−to−Ambient Junction−to−Case
ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic
Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C)
Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol RRqqJJCA
Symbol vF
iR
Value 105 3.5
Value 0.77 0.64 0.88 0.73 6.0 0.0045
Unit °C/W
Unit V
mA
ORDERING INFORMATION
Device Order Number
Package
Shipping†
MBRJ20H100CTG
TO−220 (Pb−Free, Halogen Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
TJ = 150°C 10
TJ = 125°C
1 TJ = 25°C
MBRJ20H100CTG
100
TJ = 150°C 10
TJ = 125°C
1 TJ = 25°C
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
IF, AVERAGE FORWARD CURRENT (AMPS)
1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−07 1.0E−08
0
TJ = 150°C TJ = 125°C
TJ = 25°C
20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current
1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−07 1.0E−08 100 0
TJ = 150°C TJ = 125°C
TJ = 25°C
20 40 60 80 VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
100
20 dc
15 SQUARE WAVE
10
5
0 100 110 120 130 140 150 160 170
TC, CASE TEMPERATURE (°C)
180
Figure 5. Current Derating
PFO, AVERAGE POWER DISSIPATION (WATTS)
16
14
12
SQUARE
DC
10
8
6
4
2 0
0 5 10 15 20 25 IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
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10000 1000
MBRJ20H100CTG
TJ = 25°C
C, CAPACITANCE (pF)
100
10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
10
D = 0.5 1 0.2
0.1 0.05 0.1 0.02
0.01
0.01 SINGLE PULSE
0.001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (sec)
Figure 8. Typical Transient Thermal Response, Junction−to−Case
100 1000
R(t), TYPICAL TRANSIENT THERMAL RESI.