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MBRJ20H100CTG Dataheets PDF



Part Number MBRJ20H100CTG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description SWITCHMODE Power Rectifier
Datasheet MBRJ20H100CTG DatasheetMBRJ20H100CTG Datasheet (PDF)

MBRJ20H100CTG SWITCHMODE Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately).

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MBRJ20H100CTG SWITCHMODE Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS 1 2, 4 3 TO−220 FULLPAK] CASE 221AH CT SUFFIX MARKING DIAGRAM AYWW B20H100G AKA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ISOLATED TO−220 A = Assembly Location Y = Year WW = Work Week B20H100 = Device Code G = Pb−Free Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 1 1 Publication Order Number: MBRJ20H100CT/D MBRJ20H100CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage‘ Average Rectified Forward Current (Rated VR) TC = 162°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 160°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) VRRM VRWM VR IF(AV) IFRM IFSM 100 10 20 250 V A A A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Controlled Avalanche Energy (see test conditions in Figures 9 and 10) WAVAL 200 mJ ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance Junction−to−Ambient Junction−to−Case ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol RRqqJJCA Symbol vF iR Value 105 3.5 Value 0.77 0.64 0.88 0.73 6.0 0.0045 Unit °C/W Unit V mA ORDERING INFORMATION Device Order Number Package Shipping† MBRJ20H100CTG TO−220 (Pb−Free, Halogen Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 TJ = 150°C 10 TJ = 125°C 1 TJ = 25°C MBRJ20H100CTG 100 TJ = 150°C 10 TJ = 125°C 1 TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) IF, AVERAGE FORWARD CURRENT (AMPS) 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−07 1.0E−08 0 TJ = 150°C TJ = 125°C TJ = 25°C 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−07 1.0E−08 100 0 TJ = 150°C TJ = 125°C TJ = 25°C 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current 100 20 dc 15 SQUARE WAVE 10 5 0 100 110 120 130 140 150 160 170 TC, CASE TEMPERATURE (°C) 180 Figure 5. Current Derating PFO, AVERAGE POWER DISSIPATION (WATTS) 16 14 12 SQUARE DC 10 8 6 4 2 0 0 5 10 15 20 25 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 10000 1000 MBRJ20H100CTG TJ = 25°C C, CAPACITANCE (pF) 100 10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance 10 D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (sec) Figure 8. Typical Transient Thermal Response, Junction−to−Case 100 1000 R(t), TYPICAL TRANSIENT THERMAL RESI.


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