SI3474DV

N-Channel 100 V (D-S) MOSFET Si3474DV Vishay Siliconix MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.126 at VGS = 10 V 3.8 100 0.147 at VGS = 6 V 3.5 0.189 at VGS = 4.5 V 3.1 Qg (Typ.) 2.9 nC D 3 mm D TSOP-6 Top View 16 25 D D G3 4S 2.85 mm Ordering Information: Si3474DV-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs Power Management for Mobile Computing (1, 2, 5, 6) D Marking Code YY BF XX Lot Traceability and Date Code Part # Code G (3) (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TC = 70 °C Pulsed Drain Current (t = 100 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 3.8 3 2.8b, c 2.3b, c 14 3 1.7b, c 2.5 0.31 3.6 2.33 2b, c 1.3b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junc...