N-Channel 100-V (D-S) MOSFET
New Product
N-Channel 100 V (D-S) MOSFET
Si4190ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max. 0.0...
Description
New Product
N-Channel 100 V (D-S) MOSFET
Si4190ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max. 0.0088 at VGS = 10 V 0.0094 at VGS = 7.5 V 0.0120 at VGS = 4.5 V
SO-8
ID (A)a 18.4 17.8 15.8
Qg (Typ.) 20.7 nC
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS Tested Material categorization:
For definitions of compliance www.vishay.com/doc?99912
please
see
APPLICATIONS
DC/DC Primary Side Switch Telecom/Server Industrial
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
100 ± 20 18.4 14.6 13b, c 10.3b, c
70 5.4 2.7b, c 30
45 6 3.8 3b, c 1.9b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W.
Symbol RthJA...
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