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SI7454DDP Dataheets PDF



Part Number SI7454DDP
Manufacturers Vishay
Logo Vishay
Description N-Channel 100-V (D-S) MOSFET
Datasheet SI7454DDP DatasheetSI7454DDP Datasheet (PDF)

New Product N-Channel 100 V (D-S) MOSFET Si7454DDP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.033 at VGS = 10 V 0.036 at VGS = 7.5 V 0.047 at VGS = 4.5 V ID (A)a 21 20 17.7 PowerPAK® SO-8 Qg (Typ.) 6.1 nC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7454DDP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see.

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New Product N-Channel 100 V (D-S) MOSFET Si7454DDP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.033 at VGS = 10 V 0.036 at VGS = 7.5 V 0.047 at VGS = 4.5 V ID (A)a 21 20 17.7 PowerPAK® SO-8 Qg (Typ.) 6.1 nC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7454DDP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial • Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 100 ± 20 21 17 7.9b, c 6.3b, c 40 22 3.7b, c 12 7.2 29.7 19 4.1b, c 2.6b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State RthJA RthJC 24 3.3 30 °C/W 4.2 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. Document Number: 67883 For technical questions, contact: [email protected] www.vishay.com S12-1358-Rev. A, 11-Jun-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7454DDP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 7.5 V, ID = 8 A VGS = 4.5 V, ID = 6 A VDS = 10 V, ID = 10 A 100 V 60 mV/°C -5 1.5 3.0 V ± 100 nA 1 µA 10 20 A 0.027 0.033 0.029 0.036  0.036 0.047 19 S Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 10 A VDS = 50 V, VGS = 7.5 V, ID = 10 A VDS = 50 V, VGS = 4.5 V, ID = 10 A VDS = 50 V, VGS = 0 V f = 1 MHz VDD = 50 V, RL = 5  ID  10 A, VGEN = 10 V, Rg = 1  VDD = 50 V, RL = 5  ID  10 A, VGEN = 7.5 V, Rg = 1  550 217 pF 26 12.8 19.5 9.7 15 6.1 9.5 nC 1.8 2.9 17.2 26 0.2 1 2  10 20 13 26 16 32 9 18 ns 10 20 12 24 16 32 9 18 Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. TC = 25 °C IS = 4 A IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 22 A 40 0.8 1.2 V 30 60 ns 28 56 nC 19 ns 11 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device relia.


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