New Product
N-Channel 100 V (D-S) MOSFET
Si7454DDP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max. 0.033 at VGS = 10 V 0.036 at VGS = 7.5 V 0.047 at VGS = 4.5 V
ID (A)a 21 20 17.7
PowerPAK® SO-8
Qg (Typ.) 6.1 nC
6.15 mm
S 1S
5.15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7454DDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial • Synchronous Rectification
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit 100 ± 20 21 17 7.9b, c 6.3b, c 40 22 3.7b, c 12 7.2 29.7 19 4.1b, c 2.6b, c - 55 to 150 260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t 10 s Steady State
RthJA RthJC
24 3.3
30 °C/W 4.2
Notes:
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 67883
For technical questions, contact:
[email protected]
www.vishay.com
S12-1358-Rev. A, 11-Jun-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7454DDP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
VDS VDS/TJ VGS(th)/TJ VGS(th)
IGSS IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 7.5 V, ID = 8 A VGS = 4.5 V, ID = 6 A VDS = 10 V, ID = 10 A
100 V
60 mV/°C
-5
1.5 3.0 V
± 100
nA
1 µA
10
20 A
0.027 0.033
0.029 0.036
0.036 0.047
19 S
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
Total Gate Charge
Qg
Gate-Source Charge Gate-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Qgs Qgd Qoss Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 10 A VDS = 50 V, VGS = 7.5 V, ID = 10 A
VDS = 50 V, VGS = 4.5 V, ID = 10 A
VDS = 50 V, VGS = 0 V f = 1 MHz
VDD = 50 V, RL = 5 ID 10 A, VGEN = 10 V, Rg = 1
VDD = 50 V, RL = 5 ID 10 A, VGEN = 7.5 V, Rg = 1
550 217 pF 26 12.8 19.5 9.7 15 6.1 9.5
nC 1.8 2.9 17.2 26 0.2 1 2 10 20 13 26 16 32 9 18
ns 10 20 12 24 16 32 9 18
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
TC = 25 °C IS = 4 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
22 A
40
0.8 1.2
V
30 60 ns
28 56 nC
19 ns
11
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device relia.