N-Channel MOSFET
New Product
N-Channel 30 V (D-S) MOSFET
SiJ458DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) 0.0022 at V...
Description
New Product
N-Channel 30 V (D-S) MOSFET
SiJ458DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) 0.0022 at VGS = 10 V 0.0026 at VGS = 4.5 V
ID (A)a, g 60 60
Qg (Typ.) 40.6 nC
PowerPAK® SO-8L Single
6.15 mm
5.13 mm
D
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
POL VRM DC/DC Converters High Current Switching
D
4 G
3 S
2 S
1 S
Ordering Information: SiJ458DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
G
S N-Channel MOSFET
Limit 30
± 20
60g 60g 35.5b, c 28.4b, c 80 60g 4.5b, c 40
80
69.4
44.4 5.0b, c 3.2b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
20 1.3
25 °C/W
1.8
Notes: a...
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