N-Channel 100 V (D-S) MOSFET
SiR846ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max. 0.0078 at VGS = 10 V 0.0085 at VGS = 7.5 V 0.0095 at VGS = 6 V
ID (A)a 60 60 60
Qg (Typ.) 26.7 nC
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
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