N-Channel 100-V (D-S) MOSFET
N-Channel 100 V (D-S) MOSFET
SiS892ADN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () (Max.) 0.033 at VGS ...
Description
N-Channel 100 V (D-S) MOSFET
SiS892ADN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () (Max.) 0.033 at VGS = 10 V 0.036 at VGS = 7.5 V 0.047 at VGS = 4.5 V
ID (A)f 28 26.8 23.5
Qg (Typ.) 6.1 nC
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS Tested Capable of Operating with 5 V Gate Drive
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PowerPAK® 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: SiS892ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS Telecom Bricks Primary side switch Synchronous Rectification Industrial
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
100
± 20
28
22.3 7.4a, b 6.0a, b
40 30g 3.1a, b
10
5
52
33 3.7a, b 2.4a, b
- 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta,...
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