SUM90N06-4m4P

SUM90N06-4m4P Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.0044 at VGS = 10 V ID (A) 90d Qg (Typ) 105 TO-263 FEATURES TrenchFET® Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial OR-ing D RoHS COMPLIANT G DS Top View Ordering Information: SUM90N06-4m4P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 60 ± 20 90d 90d 240 70 245 300b 3.75 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74642 S-71691-Rev. A, 13-Aug-07 Symbol RthJA RthJC Limit 40 0.5 Unit °C/W www.vishay.com 1 SUM90N06-4m4P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA Gate Threshold Voltage ...