DatasheetsPDF.com

SUM90N08-6m2P Dataheets PDF



Part Number SUM90N08-6m2P
Manufacturers Vishay
Logo Vishay
Description N-Channel 75-V (D-S) MOSFET
Datasheet SUM90N08-6m2P DatasheetSUM90N08-6m2P Datasheet (PDF)

SUM90N08-6m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 75 0.0062 at VGS = 10 V ID (A) 90d Qg (Typ) 75 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial TO-263 D RoHS COMPLIANT G DS Top View Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise .

  SUM90N08-6m2P   SUM90N08-6m2P


Document
SUM90N08-6m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 75 0.0062 at VGS = 10 V ID (A) 90d Qg (Typ) 75 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial TO-263 D RoHS COMPLIANT G DS Top View Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 75 ± 20 90d 90d 240 50 125 272b 3.75 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69552 S-72505-Rev. A, 03-Dec-07 Symbol RthJA RthJC Limit 40 0.55 Unit °C/W www.vishay.com 1 SUM90N08-6m2P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 75 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V, TJ = 125 °C VDS = 75 V, VGS = 0 V, TJ = 150 °C On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C Forward Transconductancea Dynamicb gfs VDS = 15 V, ID = 20 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 30 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 50 A Gate-Drain Chargec Qgd Gate Resistance Rg f = 1 MHz Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) tf VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω Source-Drain Diode Ratings and Characteristics TC = 25 °Cb Continuous Current IS Pulsed Current ISM Forward Voltagea VSD IF = 20 A, VGS = 0 V Reverse Recovery Time trr Peak Reverse Recovery Current IRM(REC) IF = 75 A, di/dt = 100 A/µs Reverse Recovery Charge Qrr Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Min Typ Max Unit 75 V 2.5 4.5 ± 250 nA 1 50 µA 250 70 A 0.0051 0.0082 0.0062 0.0105 Ω 50 S 4620 517 247 75 25.5 20 1.2 16 11 24 10 115 2.4 30 20 40 20 pF nC Ω ns 0.83 60 3.3 100 85 240 1.5 100 5 150 A V ns A nC Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69552 S-72505-Rev. A, 03-Dec-07 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 VGS = 10 V thru 7 V 100 120 100 SUM90N08-6m2P Vishay Siliconix I D - Drain Current (A) 80 60 40 20 0 0 100 80 60 40 VGS = 6 V VGS = 5 V 1234 VDS - Drain-to-Source Voltage (V) Output Characteristics (SUM) 5 TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 80 60 40 20 0 0 0.0057 0.0055 0.0053 0.0051 TC = 125 °C 25 °C - 55 °C 2468 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 10 VGS = 10 V rDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 20 0.0049 0 0 0.05 0.04 12 24 36 48 VGS - Gate-to-Source Voltage (V) Transconductance 60 ID = 20 A 0.0047 0 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current (SUM) 6000 4800 Ciss C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 0.03 3600 0.02 0.01 TA = 25 °C TA = 150 °C 0 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage (SUM) Document Number: 69552 S-72505-Rev. A, 03-Dec-07 2400 1200 Crss 0 0 Coss 15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance 75 www.vishay.com 3 SUM90N08-6m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 50 A 2.0 8 VDS = 30 V 1.7 ID = 20 A 6 VDS = 60 V 1.4 4 1.1 VGS = 10 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 0.8 0 0 100 10 1.0 0.1 0.01 17 34 51 68 Qg - Total Gate Charge (nC) Gate Charge 85 150 °C 25 °C VGS(th) Variance (V) 0.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction .


SUM90N08-4m8P SUM90N08-6m2P SUP50020EL


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)