Document
SUM90N08-6m2P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
75 0.0062 at VGS = 10 V
ID (A) 90d
Qg (Typ) 75
FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested
APPLICATIONS • Power Supply
- Secondary Synchronous Rectification • Industrial
TO-263
D
RoHS
COMPLIANT
G DS Top View
Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 75 ± 20 90d 90d 240 50 125
272b 3.75
- 55 to 175
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.
Document Number: 69552 S-72505-Rev. A, 03-Dec-07
Symbol RthJA RthJC
Limit 40 0.55
Unit °C/W
www.vishay.com 1
SUM90N08-6m2P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 75 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V, TJ = 125 °C
VDS = 75 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS ≥ 10 V, VGS = 10 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C
Forward Transconductancea Dynamicb
gfs VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 30 V, VGS = 10 V, ID = 50 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec Turn-Off Delay Timec Fall Timec
tr td(off)
tf
VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 75 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Min Typ Max Unit
75 V
2.5 4.5
± 250
nA
1
50 µA
250
70 A
0.0051 0.0082
0.0062 0.0105
Ω
50 S
4620 517 247 75 25.5 20 1.2 16 11 24 10
115
2.4 30 20 40 20
pF
nC Ω ns
0.83 60 3.3 100
85 240 1.5 100
5 150
A
V ns A nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com 2
Document Number: 69552 S-72505-Rev. A, 03-Dec-07
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120 VGS = 10 V thru 7 V
100
120 100
SUM90N08-6m2P
Vishay Siliconix
I D - Drain Current (A)
80 60 40 20
0 0
100 80 60 40
VGS = 6 V
VGS = 5 V
1234
VDS - Drain-to-Source Voltage (V) Output Characteristics (SUM)
5
TC = - 55 °C 25 °C
125 °C
ID - Drain Current (A)
80 60 40 20
0 0
0.0057 0.0055 0.0053 0.0051
TC = 125 °C
25 °C
- 55 °C
2468
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
10
VGS = 10 V
rDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
20 0.0049
0 0
0.05 0.04
12 24 36 48
VGS - Gate-to-Source Voltage (V) Transconductance
60
ID = 20 A
0.0047 0
20 40 60 80 100
ID - Drain Current (A) On-Resistance vs. Drain Current (SUM)
6000 4800
Ciss
C - Capacitance (pF)
rDS(on) - On-Resistance (Ω)
0.03 3600
0.02 0.01
TA = 25 °C
TA = 150 °C 0
4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage (SUM)
Document Number: 69552 S-72505-Rev. A, 03-Dec-07
2400
1200
Crss 0
0
Coss
15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance
75
www.vishay.com 3
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 ID = 50 A
2.0
8 VDS = 30 V
1.7
ID = 20 A
6
VDS = 60 V
1.4
4 1.1
VGS = 10 V
rDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
2 0.8
0 0
100 10 1.0 0.1
0.01
17 34 51 68
Qg - Total Gate Charge (nC) Gate Charge
85
150 °C
25 °C
VGS(th) Variance (V)
0.5 - 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction .