QY-S1010NP

Si Photodiode For Visible to Near IR range QY-S1010NP Features High sensitivity High cost performance Applications Optical equipments Analytical instruments Measurements equipments Maximum ratings (Typ. Ta=25℃) Item Symbol Rating Reverse voltage VR 5 Chip Size S 10*10 Operating temperature. Topr. -20~+80 Storage temperature. Tstg. -30~+120 Soldering temp. * Tsol. 260 For MAX 5 seconds at the position of 2mm from the package Unit V mm2 ℃ ℃ ℃ Electro-optical characteristics (Typ. Ta=25℃) Item Open circuit voltage Short circuit current Dark current Terminal Capacitance Spectral sensitivity Peak wavelength Symbol VOC ISC Id Ct λ λp Conditions EV=100Lx 2856K VR= -1V V=0V,f=10KHz Min. 400 Typ. 0.3 55 120 20 940 Max. 1100 Unit V μA nA nF nm nm http://www.qingyuetech.com Tel：8621-51198458 QYTECH Si Photodiode Spectral response Short Circuit current Vs. Illuminance PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 200 (Typ. Ta=25 OC) 400 600 800 1000 WAVELENGTH (nm) 1200 Dark Current Vs. Ambient Temperature Dark current (nA) 10000 (VR=-1V) 1000 100 10 1 0.1 -20 0 20 40 60 80 Ambient Temperature (oC) 100 Dark current (nA) short circuit current (uA) 1000 (Typ. Ta=25 OC) 100 10 1 0.1 1 10 100 1000 Illuminance (LX) 10000 Dark Current Vs. Reverse Voltage (Typ Ta=25oC) 1000 100 10 1 0.01 0.1 1 10 Reverse Voltage (V) 100 http://www.qingyuetech.com Tel：8621-51198458 QYTECH Si Photodiode ■ （MM） 2-φ0.5 ： ■ ■ ...