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1N6383 Dataheets PDF



Part Number 1N6383
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Zener Transient Voltage Suppressors
Datasheet 1N6383 Datasheet1N6383 Datasheet (PDF)

1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ axial leaded package and are ideally-suited f.

  1N6383   1N6383


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1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. Specification Features: • Working Peak Reverse Voltage Range − 8 V to 45 V • Peak Power − 1500 Watts @ 1 ms • ESD Rating of Class 3 (>16 KV) per Human Body Model • Maximum Clamp Voltage @ Peak Pulse Current • Low Leakage < 5 mA Above 10 V • Response Time is Typically < 1 ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL ≤ 25°C PPK 1500 Watts Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C Thermal Resistance, Junction−to−Lead Operating and Storage Temperature Range PD RqJL TJ, Tstg 5.0 20 20 − 65 to +175 Watts mW/°C °C/W °C 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2. *Please see 1N6373 – 1N6381 (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) for Unidirectional Devices http://onsemi.com AXIAL LEAD CASE 41A PLASTIC L MPTE −xxC 1N 63xx YYWW L ICTE −xxC YYWW L = Assembly Location MPTE−xxC = ON Device Code ICTE−xxC = ON Device Code 1N63xx = JEDEC Device Code YY = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MPTE−xxC MPTE−xxCRL4 Axial Lead Axial Lead 500 Units/Box 1500/Tape & Reel ICTE−xxC* ICTE−xxCRL4 Axial Lead Axial Lead 500 Units/Box 1500/Tape & Reel 1N63xx Axial Lead 500 Units/Box 1N63xxRL4 Axial Lead 1500/Tape & Reel *ICTE−10C Not Available in 500 Units/Box © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: 1N6382/D 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP VC VRWM IR VBR IT QVBR Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Variation of VBR I IPP VC VBR VRWM IIRT IIRT V VRWM VBR VC IPP Bi−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) JEDEC Device (ON Device) Device Marking VRWM (Note 2) (Volts) IR @ VRWM (mA) Breakdown Voltage VBR (Note 3) (Volts) Min Nom Max @ IT (mA) VC @ IPP (Note 4) VC IPP (Volts) (A) VC (Volts) (Note 4) @ IPP =1A @ IPP = 10 A QVBR (mV/°C) 1N6382 1N6382 (MPTE−8C) MPTE−8C 8.0 25 9.4 − − 1.0 15 100 11.3 11.5 8.0 1N6383 1N6383 (MPTE−10C) MPTE−10C 10 2.0 11.7 − − 1.0 16.7 90 13.7 14.1 12 1N6384 1N6384 (MPTE−12C) MPTE−12C 12 2.0 14.1 − − 1.0 21.2 70 16.1 16.5 14 1N6385 1N6385 (MPTE−15C) MPTE−15C 15 2.0 17.6 − − 1.0 25 60 20.1 20.6 18 1N6386 1N6386 (MPTE−18C) MPTE−18C 18 2.0 21.2 − − 1.0 30 50 24.2 25.2 21 1N6387 1N6387 (MPTE−22C) MPTE−22C 22 2.0 25.9 − − 1.0 37.5 40 29.8 32 26 1N6388 1N6388 (MPTE−36C) MPTE−36C 36 2.0 42.4 − − 1.0 65.2 23 50.6 54.3 50 1N6389 1N6389 (MPTE−45C) MPTE−45C 45 2.0 52.9 − − 1.0 78.9 19 63.3 70 60 ICTE−10C* ICTE−10C* ICTE−12C ICTE−12C 10 12 2.0 11.7 2.0 14.1 − − − 1.0 16.7 − 1.0 21.2 90 13.7 14.1 8.0 70 16.1 16.5 12 ICTE−15C ICTE−18C ICTE−22C ICTE−36C ICTE−15C ICTE−18C ICTE−22C ICTE−36C 15 18 22 36 2.0 17.6 2.0 21.2 2.0 25.9 2.0 42.4 − − − − − 1.0 25 − 1.0 30 − 1.0 37.5 − 1.0 65.2 60 20.1 20.6 14 50 24.2 25.2 18 40 29.8 32 21 23 50.6 54.3 26 NOTES: 2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled. 4. Surge current waveform per Figure 4 and derate per Figures 1 and 2. *Not Available in the 500 Units/Box. http://onsemi.com 2 PPK, PEAK POWER (kW) 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 10 1 0.1 ms 1 ms 10 ms 100 ms 1 ms 10 ms tP, PULSE WIDTH Figure 1. Pulse Rating Curve PEAK PULSE DERATING IN % OF P.


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