Document
1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C)
1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors
Bidirectional*
Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
• Working Peak Reverse Voltage Range − 8 V to 45 V • Peak Power − 1500 Watts @ 1 ms • ESD Rating of Class 3 (>16 KV) per Human Body Model • Maximum Clamp Voltage @ Peak Pulse Current • Low Leakage < 5 mA Above 10 V • Response Time is Typically < 1 ns
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL ≤ 25°C
PPK
1500
Watts
Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C
Thermal Resistance, Junction−to−Lead
Operating and Storage Temperature Range
PD
RqJL TJ, Tstg
5.0
20 20 − 65 to +175
Watts
mW/°C °C/W
°C
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2.
*Please see 1N6373 – 1N6381 (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) for Unidirectional Devices
http://onsemi.com
AXIAL LEAD CASE 41A PLASTIC
L MPTE −xxC 1N 63xx YYWW
L ICTE −xxC YYWW
L = Assembly Location MPTE−xxC = ON Device Code ICTE−xxC = ON Device Code 1N63xx = JEDEC Device Code YY = Year WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MPTE−xxC MPTE−xxCRL4
Axial Lead Axial Lead
500 Units/Box 1500/Tape & Reel
ICTE−xxC* ICTE−xxCRL4
Axial Lead Axial Lead
500 Units/Box 1500/Tape & Reel
1N63xx
Axial Lead 500 Units/Box
1N63xxRL4
Axial Lead 1500/Tape & Reel
*ICTE−10C Not Available in 500 Units/Box
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number: 1N6382/D
1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP VC VRWM IR VBR IT QVBR
Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Variation of VBR
I IPP
VC VBR VRWM IIRT
IIRT
V VRWM VBR VC
IPP Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
JEDEC Device (ON Device)
Device Marking
VRWM (Note 2) (Volts)
IR @ VRWM (mA)
Breakdown Voltage
VBR (Note 3) (Volts) Min Nom Max
@ IT (mA)
VC @ IPP (Note 4)
VC IPP
(Volts)
(A)
VC (Volts) (Note 4)
@ IPP =1A
@ IPP = 10 A
QVBR (mV/°C)
1N6382
1N6382
(MPTE−8C) MPTE−8C
8.0
25 9.4
−
− 1.0
15
100 11.3 11.5 8.0
1N6383
1N6383
(MPTE−10C) MPTE−10C
10
2.0 11.7
−
− 1.0 16.7
90 13.7 14.1 12
1N6384
1N6384
(MPTE−12C) MPTE−12C
12
2.0 14.1
−
− 1.0 21.2
70 16.1 16.5 14
1N6385
1N6385
(MPTE−15C) MPTE−15C
15
2.0 17.6
−
− 1.0
25
60 20.1 20.6 18
1N6386
1N6386
(MPTE−18C) MPTE−18C
18
2.0 21.2
−
− 1.0
30
50 24.2 25.2 21
1N6387
1N6387
(MPTE−22C) MPTE−22C
22
2.0 25.9
−
− 1.0 37.5
40 29.8
32
26
1N6388
1N6388
(MPTE−36C) MPTE−36C
36
2.0 42.4
−
− 1.0 65.2
23 50.6 54.3 50
1N6389
1N6389
(MPTE−45C) MPTE−45C
45
2.0 52.9
−
− 1.0 78.9
19 63.3
70
60
ICTE−10C* ICTE−10C* ICTE−12C ICTE−12C
10 12
2.0 11.7 2.0 14.1
− −
− 1.0 16.7 − 1.0 21.2
90 13.7 14.1 8.0 70 16.1 16.5 12
ICTE−15C ICTE−18C ICTE−22C ICTE−36C
ICTE−15C ICTE−18C ICTE−22C ICTE−36C
15 18 22 36
2.0 17.6 2.0 21.2 2.0 25.9 2.0 42.4
− − − −
− 1.0
25
− 1.0
30
− 1.0 37.5
− 1.0 65.2
60 20.1 20.6 14 50 24.2 25.2 18 40 29.8 32 21 23 50.6 54.3 26
NOTES: 2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level. 3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled. 4. Surge current waveform per Figure 4 and derate per Figures 1 and 2. *Not Available in the 500 Units/Box.
http://onsemi.com 2
PPK, PEAK POWER (kW)
1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C)
100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5
10
1 0.1 ms
1 ms 10 ms 100 ms 1 ms 10 ms tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
PEAK PULSE DERATING IN % OF P.