SI4436DY

New Product N-Channel 60-V (D-S) MOSFET Si4436DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.036 at VGS = 10 V 0.043 at VGS = 4.5 V ID (A)d 8 8 Qg (Typ.) 10.5 nC SO-8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Optimized for “Low Side” Synchronous Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS CCFL Inverter S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free) Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit 60 ± 20 8a 6.8 6.1b, c 4.8b, c 25 4.2 2.1b, c 15 11.2 5 3.2 2.5b, c 1.6b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 50 ...