IRFD113

www.vishay.com IRFD113, SiHFD113 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 7 2 7 Single 0.8 HVMDIP S G D D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES For Automatic Insertion Compact Plastic Package End Stackable Fast Switching Low Drive Current Easily Paralleled Excellent Temperature Stability Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging. HVMDIP IRFD113PbF SiHFD113-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise n...