Document
Power MOSFET
IRFZ40, SiHFZ40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
67 18 25 Single
0.028
D
TO-220AB
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12). c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
LIMIT 60 ± 20 50 36 200 1.0 100 150 4.5
- 55 to + 175 300 10 1.1
UNIT V
A
W/°C mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91385 S11-0520-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ40, SiHFZ40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 31 Ab
VDS = 25 V, ID = 31 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg
Qgs
VGS = 10 V
ID = 51 A, VDS = 48 V, see fig. 6 and 13b
Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(on) tr
td(off) tf
VDD = 30 V, ID = 51 A, Rg = 9.1 , RD = 0.55 , see fig. 10b
MIN. TYP. MAX. UNIT
60 -
-V
- 0.060 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 0.028
15 -
-S
- 1900 - 920 - 170 -
pF
- - 67
- - 18 nC
- - 25 - 14 - 110 -
ns - 45 - 92 -
Internal Drain Inductance
LD
Internal Source Inductance Drain-Source Body Diode Characteristics
LS
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
- 4.5 nH
- 7.5 -
Continuous Source-Drain Diode Current IS MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 50 A
- - 200
Body Diode Voltage
VSD
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
- - 2.5 V
Body Diode Reverse Recovery Time
trr
- 120 180 ns
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/s
Body Diode Reverse Recovery Charge
Qrr
- 0.53 0.80 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
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Document Number: 91385 S11-0520-Rev. B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFZ40, SiHFZ40
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 1 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 2 - Normalized On-Resistance vs. Temperature
Document Number: 91385 S11-0520-Rev. B, 21-Mar-1.