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IRFZ40 Dataheets PDF



Part Number IRFZ40
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFZ40 DatasheetIRFZ40 Datasheet (PDF)

Power MOSFET IRFZ40, SiHFZ40 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 67 18 25 Single 0.028 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide t.

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Power MOSFET IRFZ40, SiHFZ40 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 67 18 25 Single 0.028 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor Single Pulse Avalanche Energyb EAS Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12). c. ISD  51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. e. Current limited by the package, (die current = 51 A). LIMIT 60 ± 20 50 36 200 1.0 100 150 4.5 - 55 to + 175 300 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91385 S11-0520-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 31 Ab VDS = 25 V, ID = 31 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VGS = 10 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 30 V, ID = 51 A, Rg = 9.1 , RD = 0.55 , see fig. 10b MIN. TYP. MAX. UNIT 60 - -V - 0.060 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.028  15 - -S - 1900 - 920 - 170 - pF - - 67 - - 18 nC - - 25 - 14 - 110 - ns - 45 - 92 - Internal Drain Inductance LD Internal Source Inductance Drain-Source Body Diode Characteristics LS Between lead, 6 mm (0.25") from package and center of die contact D G S - 4.5 nH - 7.5 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 50 A - - 200 Body Diode Voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time trr - 120 180 ns TJ = 25 °C, IF = 51 A, dI/dt = 100 A/s Body Diode Reverse Recovery Charge Qrr - 0.53 0.80 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Document Number: 91385 S11-0520-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFZ40, SiHFZ40 Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 1 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 2 - Normalized On-Resistance vs. Temperature Document Number: 91385 S11-0520-Rev. B, 21-Mar-1.


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