N-Channel MOSFET
New Product
N-Channel 40-V (D-S) MOSFET
SiR836DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.019 at VGS ...
Description
New Product
N-Channel 40-V (D-S) MOSFET
SiR836DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.019 at VGS = 10 V 40
0.0225 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a, e 21 19.6
Qg (Typ.) 5.8 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3G
4
Bottom View
APPLICATIONS POL Synchronous Rectification
D
G S
Ordering Information: SiR836DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)f, g
Limit
40 ± 20
21 17 10.6b, c 8.5b, c 50
14 3.5b, c
10
5 15.6 10 3.9b, c 2.5b, c - 55 to 150 260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
27 6.4
32 °C/W 8.0
Notes:
a. Based on TC = 25 °C. b. Surface ...
Similar Datasheet