SUD23N06-31

N-Channel 60 V (D-S), MOSFET SUD23N06-31 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.031 at VGS = 10 V 0.045 at VGS = 4.5 V ID (A)a 9.1 7.6 Qg (Typ.) 6.5 nC TO-252 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters D Drain Connected to Tab GDS Top View Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 60 ± 20 21.4 17.1 9.1a 7.6a 50 20.8 3.8a 20 20 31.25 20 5.7a 3.6a - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Surface mounted on 1" x 1" FR4 board, t  10 s. t  10 s Steady State Symbol RthJA RthJC Typical 18 3.2 Maximum 22 4.0 Unit °C/W Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 www.vishay.com 1 SUD23N06-31 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise n...