SUD23N06-31L

SUD23N06-31L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.031 @ VGS = 10 V 0.045 @ VGS = 4.5 V ID (A)a 23 19.5 FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive - 12-V Systems TO-252 D GDS Top View Drain Connected to Tab Ordering Information: SUD23N06-31L G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C L = 0.1 mH TC = 25_C TA = 25_C VGS ID IDM IS IAR EAR PD TJ, Tstg "20 23 16.5 50 23 20 20 100 3a - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case t p 10 sec. Steady State Notes: a. Surface mounted on 1” x 1” FR4 Board, t v 10 sec. Document Number: 72145 S-03536—Rev. A, 24-Mar-03 Symbol RthJA RthJC Typical 18 40 3.2 Limit 22 50 4 Unit _C/W www.vishay.com 1 SUD23N06-31L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward ...