BFR750L3RH

Linear Low Noise SiGe:C Bipolar RF Transistor High gain ultra low noise RF transistor Based on Infineon's reliable high volume Silicon Germanium technology Provides outstanding performance for a wide range of wireless applications up to 10 GHz Ideal for WLAN and all 5-6 GHz applications High OIP3 and P-1dB for driver stages High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz Pb-free (RoHS compliant) and halogen-free very thin small leadless package (package height 0.32 mm max. ideal for modules) Qualification report according to AEC-Q101 available BFR750L3RH ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR750L3RH Marking Pin Configuration R8 1=B 2=C 3=E Package TSLP-3-9 1 2013-09-09 BFR750L3RH Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 96°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value 4 3.5 13 13 1.2 90 9 360 150 -55 ... 150 Value 150 Unit V mA mW °C Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, IB = 0 C...