BFR740L3

BFR740L3 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz High maximum stable gain Gms = 24 dB at 1.8 GHz Gold metallization for extra high reliability 150 GHz fT-Silicon Germanium technology 3 12 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR740L3 Marking Pin Configuration R7 1=B 2=C 3=E Package TSLP-3-8 Maximum Ratings Parameter Symbol Collector-emitter voltage TA > 0°C TA ≤ 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 94°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1TS is measured on the collector lead at the soldering point to the pcb Value 4 3.5 13 13 1.2 30 3 160 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 1 2005-10-17 BFR740L3 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 350 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, I...