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IHW40T60

Infineon

IGBT

TRENCHSTOP™ Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel...


Infineon

IHW40T60

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Description
TRENCHSTOP™ Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features:  Very low VCE(sat) 1.5V (typ.)  Maximum junction temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) and positive temperature coefficient  Low EMI  Low gate charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice models : http://www.infineon.com/igbt/ Applications:  Inductive Cooking  Soft & Hard Switching Applications Type IHW40T60 VCE 600V IC 40A VCE(sat),Tj=25°C 1.55V Tj,max 175C Marking H40T60B C G E PG-TO247-3 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 µs, D<0.01) Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls ...




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