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K12728-010K Dataheets PDF



Part Number K12728-010K
Manufacturers HAMAMATSU
Logo HAMAMATSU
Description Two-color detector
Datasheet K12728-010K DatasheetK12728-010K Datasheet (PDF)

Two-color detector K12728-010K Wide spectral response range: 0.32 to 1.65 μm, Compact ceramic package The K12728-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the current K1713-09, it incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. It features low noise and low dark current and supports reflow soldering. Features Wide spectral response range Compact, low noise, low.

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Two-color detector K12728-010K Wide spectral response range: 0.32 to 1.65 μm, Compact ceramic package The K12728-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the current K1713-09, it incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. It features low noise and low dark current and supports reflow soldering. Features Wide spectral response range Compact, low noise, low dark current Supports reflow soldering Applications Spectrophotometers Radiation thermometers Structure Parameter Window material Package Photosensitive area Symbol - - Si InGaAs Condition Specification Borosilicate glass Ceramic 2.4 × 2.4 ϕ1.0 Unit - mm Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol Condition VR max Si, Ta=25 °C InGaAs, Ta=25 °C Topr No condensation Tstg No condensation Value 5 10 -20 to +70 -20 to +85 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Cutoff frequency Terminal capacitance Shunt resistance Detectivity Symbol λ λp S ID fc Ct Rsh D* Condition Min. Si - InGaAs - Si - InGaAs - Si, λ=λp InGaAs, λ=λp Si, VR=10 mV InGaAs, VR=10 mV Si, -3 dB, VR=0 V, RL=50 Ω InGaAs, -3 dB, VR=0 V, RL=50 Ω Si, VR=0 V, f=10 kHz 0.3 0.3 1 5 - InGaAs, VR=0 V, f=1 MHz - Si, VR=10 mV 100 InGaAs, VR=10 mV Si, λ=λp InGaAs, λ=λp 25 5 × 1012 5 × 1011 www.hamamatsu.com Typ. 0.32 to 1.1 1.1 to 1.65 0.96 1.55 0.45 0.55 30 80 2 10 60 130 300 125 1.4 × 1013 3.5 × 1012 Max. - 100 400 110 200 - Unit μm μm A/W pA MHz pF MΩ MΩ cm∙Hz1/2/W 1 Photosensitivity (A/W) Two-color detector K12728-010K Spectral response 0.7 (Typ. Ta=25 °C) 0.6 0.5 InGaAs 0.4 0.3 Si 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) KIRDB0598EB Dark current vs. reverse voltage 10 nA (Typ. Ta=25 °C) Transmittance (%) Spectral transmittance of window material 100 (Typ. Ta=25 °C) 90 80 70 60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) KIRDB0599EA 1 nA InGaAs 100 pA Si 10 pA 0.01 0.1 1 10 Reverse voltage (V) 100 KIRDB0600EA Dark current 2 Terminal capacitance Shunt resistance Two-color detector K12728-010K Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 °C) 1 nF 100 pF 10 pF InGaAs (f=1 MHz) Si (f=10 kHz) 1 pF 0.01 0.1 1 10 Reverse voltage (V) 100 KIRDB0601EA Shunt resistance vs. element temperature 10 TΩ (Typ. VR=10 mV) 1 TΩ 100 GΩ 10 GΩ 1 GΩ Si 100 MΩ 10 MΩ 1 MΩ InGaAs 100 kΩ 10 kΩ -20 0 20 40 60 80 100 Element temperature (°C) KIRDB0602EA Dimensional outline (unit: mm) Index mark 6.6 ± 0.2 Recommended land mark pattern (unit: mm) 2.5 3.3 2.5 Ž 8.0 2.4 1.6 2.4 0.8 0.9 8.0 ± 0.15 7.0 ± 0.1 Photosensitive area InGaAs (0.07) Window Photosensitive area Si 0.7 ± 0.1 1.6 ± 0.2 2.4 ± 0.3 2.0 ± 0.2 3.7 ± 0.2 2.0 ± 0.2 2.0 ± 0.2 2.0 ± 0.2 0.5 ± 0.1 Ž Œ 2.5 ± 0.2 (0.15) ŒCathode (Si) Anode (Si) ŽCathode (InGaAs) Anode (InGaAs) Center position accuracy of photosensitive area -0.3≤X≤+0.3 -0.3≤Y≤+0.3 KIRDA0243EA Œ 0.5 8.0 2.5 3.3 2.5 KIRDC0119EA 3 Two-color detector K12728-010K Temperature (°C) Measured example of temperature profile with our hot-air reflow oven for product testing 300 260 °C max 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 450 500 550 Time (s) KIRDC0120EA ∙ After unpacking, store the device in an environment at a temperature range of 5 to 30 °C and a humidity of 60% or less, and perform reflow soldering within 4 weeks. ∙ The thermal stress applied to the device during reflow soldering varies depending on the circuit board and the reflow oven that is used. ∙ When setting the reflow conditions, verify that the reliability of the device is not compromised by the reflow soldering process. 4 Two-color detector Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic packages Technical information ∙ Infrared detector / Technical information K12728-010K Information described in this material is current as of August, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within .


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