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MGBR10L45C

Unisonic Technologies

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10L45C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L...


Unisonic Technologies

MGBR10L45C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10L45C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L45C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10L45CL-TA3-T MGBR10L45CG-TA3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 Pin Assignment 123 AKA Packing Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-114.c MGBR10L45C Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 45 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 45 45 V V RMS Reverse Voltage Average Rectified Output Current (TC=140°C) Per Leg Total VR(RMS) IO 32 5 10 V A A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 90 A Repetitive Peak Avalanche Power (1μs, 25°C) Operating Junction Temperature PARM TJ 5000 -65 ~ +150 W °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute ...




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