MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR10S45
MOS GATED BARRIER RECTIFIER
DIODE
DESCRIPTION
The UTC MGBR10S45 is a surfac...
Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10S45
MOS GATED BARRIER RECTIFIER
DIODE
DESCRIPTION
The UTC MGBR10S45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
11
TO-220-2
TO-252
FEATURES
* Super low forward voltage drop * High switching speed
1 TO-252D
1
TO-277
SYMBOL
TO-220-2
TO-252/TO-277
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
MGBR10S45L-TA2-T
MGBR10S45G-TA2-T
TO-220-2
MGBR10S45L-TN3-R
MGBR10S45G-TN3-R
TO-252
MGBR10S45L-T27-R
MGBR10S45G-T27-R
TO-277
Note: Pin Assignment: A: Anode K: Common Cathode
Pin Assignment 123 KA AKA AKA
Packing
Tube Tape Reel Tape Reel
MARKING
TO-220-2 / TO-252 / TO-252D
TO-277
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-115.D
MGBR10S45
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM
45
V
Working Peak Reverse Voltage Peak Repetitive Reverse Voltage
VRWM VRRM
45 45
V V
RMS Reverse Voltage Average Rectified Output Current
TC=140°C
VR(RMS) IO
32 10
V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
...
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