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MGBR10S45

Unisonic Technologies

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10S45 MOS GATED BARRIER RECTIFIER DIODE  DESCRIPTION The UTC MGBR10S45 is a surfac...


Unisonic Technologies

MGBR10S45

File Download Download MGBR10S45 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10S45 MOS GATED BARRIER RECTIFIER DIODE  DESCRIPTION The UTC MGBR10S45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc. 11 TO-220-2 TO-252  FEATURES * Super low forward voltage drop * High switching speed 1 TO-252D 1 TO-277  SYMBOL TO-220-2 TO-252/TO-277  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MGBR10S45L-TA2-T MGBR10S45G-TA2-T TO-220-2 MGBR10S45L-TN3-R MGBR10S45G-TN3-R TO-252 MGBR10S45L-T27-R MGBR10S45G-T27-R TO-277 Note: Pin Assignment: A: Anode K: Common Cathode Pin Assignment 123 KA AKA AKA Packing Tube Tape Reel Tape Reel  MARKING TO-220-2 / TO-252 / TO-252D TO-277 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-115.D MGBR10S45 DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 45 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 45 45 V V RMS Reverse Voltage Average Rectified Output Current TC=140°C VR(RMS) IO 32 10 V A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 150 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG ...




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