SIR158DP

www.vishay.com SiR158DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.00180 at VGS = 10 V 0.00230 at VGS = 4.5 V ID (A) a, g 60 g 60 g Qg (TYP.) 41.5 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR158DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® gen III power MOSFET 100 % Rg and UIS tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS Low-side switch for DC/DC converters - Servers - POL - VRM G OR-ing D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg LIMIT 30 ± 20 60 g 60 g 40 b, c 32 b, c 400 60 g 4.9 b, c 50 125 83 53 5.4 b, c 3.4 b, c -55 to 150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f Maximum Junction-to-...