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SiR798DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () (Max.) 0.00205 at VGS = 10 V 0.00300 at VGS = 4.5 V
ID (A)a 60 60
PowerPAK® SO-8
Qg (Typ.) 41.6 nC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • SkyFET® Monolithic TrenchFET®
Power MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Notebook PC
- Vcore and Memory - Low Side
D
Schottky Diode G
Ordering Information: SiR798DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IDM IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20 60a 60a 38.2b, c 30.3b, c
80 60a 5b, c
35
61.25
83
53 5.4b, c 3.4b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t 10 s Steady State
RthJA RthJC
18 1
23 °C/W
1.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63552
www.vishay.com
S11-2182-Rev. A, 07-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR798DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb
VDS VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
Ciss Coss Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz
VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1
Continuous Source-Drain Diode Current Pulse Diode Forward Currenta
IS ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
TC = 25 °C IS = 3 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
30 V
1 2.5
± 100
nA
0.040 3.5
0.200 35
mA
30 A
0.00170 0.00205 0.00220 0.00300
103 S
5050 895 425 86 130 41.6 63 12.5 12.8 0.2 0.7 1.4 17 34 11 22 43 80
9 18 35 65 28 55 39 70 13 26
pF nC
ns
0.43 35 30 15 20
60 80 0.6 70 60
A
V ns nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 63552
2 S11-2182-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
TYPICAL CHARACTERISTICS (25 .