SIRA00DP

N-Channel 30 V (D-S) MOSFET SiRA00DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.00100 at VGS = 10 V 0.00135 at VGS = 4.5 V ID (A)a, g 100 100 Qg (Typ.) 66 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiRA00DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Gen IV Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous Rectification ORing High Power Density DC/DC VRMs and Embedded DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 30 + 20, - 16 100g 100g 58b, c 47b, c 400 60g 5.6b, c 50 125 104 66.6 6.25b, c 4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ...