SIRA10DP

www.vishay.com SiRA10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) 0.0037 at VGS = 10 V 0.0050 at VGS = 4.5 V ID (A) a, g 60 g 60 g Qg (TYP.) 15.4 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiRA10DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Gen IV power MOSFET 100 % Rg and UIS tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS High power density DC/DC Synchronous rectification VRMs and embedded DC/DC G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 30 +20, -16 60 g 60 g 25 b, c 23 b, c 140 34 g 4.2 b, c 20 20 40 26 5 b, c 3.2 b, c -55 to 150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) ...