N-Channel MOSFET
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SiRA10DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () (MAX.) ...
Description
www.vishay.com
SiRA10DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () (MAX.) 0.0037 at VGS = 10 V 0.0050 at VGS = 4.5 V
ID (A) a, g 60 g 60 g
Qg (TYP.) 15.4 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information: SiRA10DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
TrenchFET® Gen IV power MOSFET
100 % Rg and UIS tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS High power density DC/DC Synchronous rectification VRMs and embedded DC/DC
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT 30
+20, -16 60 g 60 g 25 b, c 23 b, c 140 34 g
4.2 b, c 20 20 40 26 5 b, c
3.2 b, c -55 to 150
260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain)
...
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