N-Channel MOSFET
New Product
N-Channel 30 V (D-S) MOSFET
SiS330DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0056 at V...
Description
New Product
N-Channel 30 V (D-S) MOSFET
SiS330DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0056 at VGS = 10 V 0.0075 at VGS = 4.5 V
ID (A)f 35g
35g
Qg (Typ.) 11.2 nC
PowerPAK 1212-8
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC
3.30 mm
D 8D
7 D
6 D
5
S 1S
3.30 mm
2 S
3G
4
Bottom View
Ordering Information: SiS330DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
Notebook Server High-Side Switch
- Synchronous Buck Converter
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
Limit
30
± 20 35g 35g 19.1a, b 17.5a, b 70 35g 3.3a, b
20
20
52
43 3.7a, b 3.1a, b
- 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain)
t 10 s Steady State
Symbol
RthJA RthJC
Typical 24 1.9
Maximum ...
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