SIS332DN

New Product N-Channel 30 V (D-S) MOSFET SiS332DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0084 at VGS = 10 V 0.0110 at VGS = 4.5 V ID (A)f 35g 35g Qg (Typ.) 8.1 nC PowerPAK 1212-8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View APPLICATIONS High Side Switch - POL - Notebook PC - Server G D S Ordering Information: SiS332DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 35g 35g 15.4a, b 12.3a, b 50 35g 3.2a, b 20 20 33 21 3.6a, b 2.3a, b - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 28 2.9 Maximum 35 3....