SIS376DN

N-Channel 20 V (D-S) MOSFET SiS376DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0058 at VGS = 10 V 20 0.0084 at VGS = 4.5 V ID (A)a 35 35 Qg (Typ.) 7.7 nC PowerPAK® 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: SiS376DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Note book PC - Synchronous Buck Converters - High Side POL D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 20 ± 20 35a 35a 22b, c 17.8b, c 50 25 31 27 3b, c 33 21 3.6b, c 2.3b, c - 55 to 150 260 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 28 2.9 Maximum 35 3.8 Unit °C/W Notes: a. Package Limited. b....