SIS780DN

New Product SiS780DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) () 0.0135 at VGS = 10 V 30 0.0175 at VGS = 4.5 V ID (A) 18a 18a Qg (Typ.) 7.3 nC PowerPAK® 1212-8 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiS780DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook PC - System Power, Memory Buck Converter Synchronous Rectifier Switch D G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 30 ± 20 18a 18a 12b, c 9.5b, c 50 18a 2.9b, c 15 11.25 27.7 17.7 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maxim...