SISA04DN

New Product N-Channel 30 V (D-S) MOSFET SiSA04DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 30 0.00215 at VGS = 10 V 0.0031 at VGS = 4.5 V ID (A)f 40g 40g Qg (Typ.) 22.5 nC PowerPAK® 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: SiSA04DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen IV Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supplies Personal Computers and Servers Telecom Bricks VRM’s and POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 30 + 20, - 16 40g 40g 30.9a, b 28.3a, b 80 40g 3.3a, b 20 20 52 43 3.7a, b 3.1a, b - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t  10 s Steady Stat...