SISA14DN

N-Channel 30 V (D-S) MOSFET SiSA14DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 30 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V ID (A)f, g Qg (Typ.) 20 9.4 nC PowerPAK® 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Gen IV Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Conversion Synchronous Rectification Synchronous Buck Converter DC/AC Inverter G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 30 + 20, - 16 20g 20g 19.7a, b 10.4a, b 80 20g 3.2a, b 15 11.25 26.5 17 3.57a, b 2.3a, b - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol Rt...