SIZ702DT

New Product N-Channel 30 V (D-S) MOSFETs SiZ702DT Vishay Siliconix PRODUCT SUMMARY Channel-1 and Channel-2 VDS (V) RDS(on) () 0.0120 at VGS = 10 V 30 0.0145 at VGS = 4.5 V ID (A) 16a 16a Qg (Typ.) 6.8 nC PowerPAIR® 6 x 3.7 Pin 1 G1 3.73 mm 1 D1 2 D1 D1 3 G2 6 S2 5 S1/D2 (Pin 7) S2 4 6 mm Ordering Information: SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook System Power POL Low Current DC/DC D1 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 ± 20 16a 16a 13.8b, c 14b, c 11b, c 11.2b, c 50 16a 16a 3.2b, c 3.7b, c 18 16 27 30 17.4 19 3.9b, c 2.5b, c 4.5b, c 2.9b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol T...