SIZ920DT

New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) Channel-1 0.0071 at VGS = 10 V 30 0.0089 at VGS = 4.5 V Channel-2 30 0.0030 at VGS = 10 V 0.0035 at VGS = 4.5 V ID (A) 40a 40a 40a 40a Qg (Typ.) 10.5 nC 29 nC PowerPAIR® 6 x 5 Pin 1 1 G2 8 7 S1/D2 Pin 9 S2 6 5 G1 D1 2 D1 3 5 mm D1 D1 4 6 mm Ordering Information: SiZ920DT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS CPU Core Power Computer Peripherals POL Synchronous Buck Converter G1 N-Channel 1 MOSFET D1 S1/D2 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 40a 40a 22b, c 17b, c 70 28a 3.6b, c ± 20 40a 40a 32b, c 26b, c 120 28a 4.3b, c 25 40 31 80 39 100 25 4.3b, c 2.8b, c 64 5.2b, c 3.3b,...