Dual N-Channel MPSFET
New Product
SiZ904DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) 3...
Description
New Product
SiZ904DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) 30
30
RDS(on) () Max. 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V
ID (A)
12a 12a 16a 16a
Qg (Typ.) 3.8 nC
7.3 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Notebook System Power POL Low Current DC/DC
PowerPAIR® 6 x 5
Pin 1
1
G2
8 7
S1/D2 Pin 9 S2
6 5
G1 D1
2
D1 3
5 mm
D1 D1
4
6 mm
Ordering Information: SiZ904DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1 MOSFET
G2
N-Channel 2 MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs) Source Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
30 30
± 20
12a 12a
9.5b, c 7.6b, c
16a 16a 14.5b, c 11.6b, c
30 12a
3.2b, c
40 16a 4b, c
10 15
5 11
20 33
12.9 21
3.8b, c 2.4b, c
4.8b, c 3.1b, c
- 55 to 150
260
Uni...
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