18P06P

SIPMOS® Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G -60 V 0.13 Ω -18.6 A PG-TO263-3 Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 18P06P Yes Packing Non dry Value steady state -18.7 -13.2 -74.8 Unit A Avalanche energy, single pulse E AS I D=18.7 A, R GS=25 Ω 151 mJ Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=18.7 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot T A=25 °C Operating and storage temperature T j, T stg ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 8 -6 ±20 81.1 "-55 ... +175" 260 °C 55/175/56 kV/µs V W °C Rev 1.6 page 1 2012-09-07 Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient,leaded SMD verson, device on PCB: Symbol Conditions SPB18P06P G min. Values typ. Unit max. R thJC R thJA R thJA minimal footprint 6 cm2 cooling area1) - - - 1.85 K/W - 62 - 62 K/W - 40 Electrical characteristics, at T ...