R6004KNJ

R6004KNJ 　　Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263S SC-83 LPT(S) 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R6004KNJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±4.0 A ±12 A Gate - Source voltage Static AC (f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 0.8 A Avalanche energy, single pulse EAS*3 46 mJ Power dissipation (Tc = 25°C) PD 58 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.004 　 　 R6004KNJ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA*5 Tsold Values Unit Min. Typ. Max. - - 2.2 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta =...