RB161SS-30

Schottky Barrier Diode RB161SS-30 lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand Size Figure (Unit : mm) 0.8 1.6±0.05 0.4±0.05 1.2±0.05 0.5 1.2 AJ lFeatures 1) Small power mold type (KMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type 0～0.03 0.8±0.05 0.6±0.03 ROHM : KMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.7±0.05 lTaping Dimensions (Unit : mm) KMD2 lStructure (1) Cathode (2) Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 40 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 30 1 5 125 V A A °C Storage temperature Tstg - -55 to +125 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current VF1 IF=0.7A - - 0.47 V VF2 IF=1.0A - - 0.52 V IR1 VR=10V - - 200 mA IR2 VR=30V - - 500 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/4 2015.10 - Rev.A RB161SS-30 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF (A) 5 1 0.1 0.01 0.001 Tj = 125°C Tj = 75°C Tj = 25°C Tj = -25°C 0.0001 0 200 400 600 800 1000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURREN...