Document
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60S Series Pin Assignment
Tab 3
2 1 Tab
3 2 Tab 1
3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3 2 1
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source
3 2 1
D
H02N60S Series Symbol:
G
S
Symbol ID IDM VGS
PD
Tj, Tstg EAS TL
Parameter Drain to Current (Continuous) Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H02N60SI (TO-251) / H02N60SJ (TO-252) H02N60SE (TO-220AB) H02N60SF (TO-220FP)
Derate above 25°C H02N60SI (TO-251) / H02N60SJ (TO-252) H02N60SE (TO-220AB) H02N60SF (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Value 2 8
±30
50 50 25
0.4 0.4 0.33 -55 to 150
35
260
Units A A V
W
W/°C
°C mJ °C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max.
Value TO-251 / TO-252
TO-220AB TO-220FP
62.5
Units 2 2 °C/W 3.3
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF IGSSR VGS(th) RDS(on)
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
gFS Forward Transconductance (VDS≥50V, ID=1A)*
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Rise Time td(off) Turn-off Delay Time
(VDD=300V, ID=2A, RG=18Ω, VGS=10V)*
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
(VDS=300V, ID=6A, VGS=10V)*
Qgd Gate-Drain Charge
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad)
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Min. Typ. Max. Unit 600 - - V
- - 1 uA - - 50 uA - - 100 nA - - -100 nA 2 - 4V - - 5Ω 1 - - mhos - 435 - 56 - pF - 9.2 - 12 - 21 -
ns - 30 - 24 - 13 22 - 2 - nC -6-
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol VSD Forward On Voltage(1) ton Forward Turn-On Time trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic IS=2A, VGS=0V, TJ=25oC
IS=2A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.6 V
- ** - ns
- 340 -
ns
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 3/6
TO-252 Dimension
M Marking:
A a1 Pb Free Mark
Pb-Free: " . " (Note) Normal: None H
J
F 02N60S
1
a5 L
C G
23
a2
H a1
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N Material:
• Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J
DIM Min. Max. A 6.35 6.80 C 4.80 5.50 F 1.30 1.70 G 5.40 6.25 H 2.20 3.00 L 0.40 0.90 M 2.20 2.40 N 0.90 1.