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H02N60SJ Dataheets PDF



Part Number H02N60SJ
Manufacturers HI-SINCERITY
Logo HI-SINCERITY
Description N-Channel Power FET
Datasheet H02N60SJ DatasheetH02N60SJ Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra.

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Features • Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 2 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 1 D H02N60S Series Symbol: G S Symbol ID IDM VGS PD Tj, Tstg EAS TL Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H02N60SI (TO-251) / H02N60SJ (TO-252) H02N60SE (TO-220AB) H02N60SF (TO-220FP) Derate above 25°C H02N60SI (TO-251) / H02N60SJ (TO-252) H02N60SE (TO-220AB) H02N60SF (TO-220FP) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Value 2 8 ±30 50 50 25 0.4 0.4 0.33 -55 to 150 35 260 Units A A V W W/°C °C mJ °C H02N60SI, H02N60SJ, H02N60SE, H02N60SF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 2/6 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-251 / TO-252 TO-220AB TO-220FP 62.5 Units 2 2 °C/W 3.3 °C/W ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Characteristic V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=1A)* gFS Forward Transconductance (VDS≥50V, ID=1A)* Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time (VDD=300V, ID=2A, RG=18Ω, VGS=10V)* tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge (VDS=300V, ID=6A, VGS=10V)* Qgd Gate-Drain Charge LD Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LS Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Min. Typ. Max. Unit 600 - - V - - 1 uA - - 50 uA - - 100 nA - - -100 nA 2 - 4V - - 5Ω 1 - - mhos - 435 - 56 - pF - 9.2 - 12 - 21 - ns - 30 - 24 - 13 22 - 2 - nC -6- - 4.5 - nH - 7.5 - nH Source-Drain Diode Symbol VSD Forward On Voltage(1) ton Forward Turn-On Time trr Reverse Recovery Time **: Negligible, Dominated by circuit inductance Characteristic IS=2A, VGS=0V, TJ=25oC IS=2A, VGS=0V, dIS/dt=100A/us Min. Typ. Max. Units - - 1.6 V - ** - ns - 340 - ns H02N60SI, H02N60SJ, H02N60SE, H02N60SF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 3/6 TO-252 Dimension M Marking: A a1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H J F 02N60S 1 a5 L C G 23 a2 H a1 Date Code Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source N Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J DIM Min. Max. A 6.35 6.80 C 4.80 5.50 F 1.30 1.70 G 5.40 6.25 H 2.20 3.00 L 0.40 0.90 M 2.20 2.40 N 0.90 1.


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